The tungsten filament of an incandescent light bulb has a temperature of approximately 3000K. The emissivity of tungsten is approximately 13, and you may assume that it is independent of wavelength.

(a) If the bulb gives off a total of 100watts, what is the surface area of its filament in square millimetres?

(b) At what value of the photon energy does the peak in the bulb's spectrum occur? What is the wavelength corresponding to this photon energy?

(c) Sketch (or use a computer to plot) the spectrum of light given off by the filament. Indicate the region on the graph that corresponds to visible wavelengths, between400and700nm.

(d) Calculate the fraction of the bulb's energy that comes out as visible light. (Do the integral numerically on a calculator or computer.) Check your result qualitatively from the graph of part (c).

( e) To increase the efficiency of an incandescent bulb, would you want to raise or lower the temperature? (Some incandescent bulbs do attain slightly higher efficiency by using a different temperature.)

(f) Estimate the maximum possible efficiency (i.e., fraction of energy in the visible spectrum) of an incandescent bulb, and the corresponding filament temperature. Neglect the fact that tungsten melts at 3695K.

Short Answer

Expert verified

(a) The surface area of its filament is A=65.3mm2.

(b) The wavelength corresponding to this photon energy isλ=1.70×10-7m.

(c) The spectrum of the light given off is 1.70×10-7m

(d) The fraction of the bulb's energy that comes out as visible light isf=0.08124.

(e) To increase the efficiency of the incandescent bulb we will raise the temperature.

(f) The maximum possible efficiency is achieved at temperatureT=7032K.

Step by step solution

01

Part(a): Step 1: Given information

We have been given that the total watts given off by a bulb are100.

02

Part(a): Step 2: Solution

Irradiated power is given byP=AeσT4

RearrangingA=PeσT4

Putting in the given values and universal constants =100W135.67×10-8W/m2K4(3000K)4

A=6.53×10-5m2A=6.53×10-5×106mm2A=65.3mm2

03

Part(b): Step 1: Given information

We have to find out at what value of the photon energy does the peak in the bulb's spectrum occur

04

Part(b): Step 2: Solution

Spectrum is given byu(T)=8π(hc)3ϵ3eϵ/kT-1

letx=ϵ/kT

u(T)=8π(kT)3(hc)3x3ex-1

For peak, partial derivative = 0

xx3ex-1=0

3x2ex-1-x3exex-12=0

3x2ex-1-x3ex=0

3ex-3-xex=0

x=2.8214

Alsoϵ=xkT

ϵ=(2.8214)13.8×10-23J/K(3000K)

ϵ=1.168×10-18J

Wavelength ϵ=hc/λ

λ=hcϵ

λ=1.70×10-7m

05

Part(c) Step 1:Given information

We have been given thatϵ400nm=6.626×10-34J·s3.0×108m/s400×10-9m=4.97×10-19=3.1eV

06

Part(c) Step 2:Simplify

The graph of this part as shown

07

Part(d) Step 1:Given information

We have been given thatf=UvisUtot

08

Part(d) Step 2:Simplify

The integration of the range of visible energy is

Uϵ3eϵ/kT-1dϵUvisvisx3ex-1dx

The boundaries are

x2=ϵ400nmkT=3.1eV8.62×10-5eV/K(3000K)=11.987

x1=ϵ700nmkT=1.77eV8.62×10-5eV/K(3000K)=6.845

09

Part(e) Step 1: Given information

We have been given thatf=15π4x1x2x3ex-1dx

10

Part(e) Step 2: Simplify

As the temperature increases,the efficiency increases

x2=ϵ400nmkTx1=ϵ700nmkT

11

Part(f) Step 1:Given information

We have been given thatx2=74x1

12

Part(f) Step 2:Simplify

The tempreature at this point is:

T=ϵ700nmkx1=1.77eV8.62×10-5eV/K(2.92)=7032K

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Most popular questions from this chapter

In Problem 7.28you found the density of states and the chemical potential for a two-dimensional Fermi gas. Calculate the heat capacity of this gas in the limit role="math" localid="1650099524353" kTεF· Also show that the heat capacity has the expected behavior when kTεF. Sketch the heat capacity as a function of temperature.

For a system of particles at room temperature, how large must ϵ-μbe before the Fermi-Dirac, Bose-Einstein, and Boltzmann distributions agree within 1%? Is this condition ever violated for the gases in our atmosphere? Explain.

Figure 7.37 shows the heat capacity of a Bose gas as a function of temperature. In this problem you will calculate the shape of this unusual graph.

(a) Write down an expression for the total energy of a gas of Nbosons confined to a volume V, in terms of an integral (analogous to equation 7.122).

(b) For T<Tcyou can set μ=0. Evaluate the integral numerically in this case, then differentiate the result with respect to Tto obtain the heat capacity. Compare to Figure 7.37.

(c) Explain why the heat capacity must approach 32Nkin the high- Tlimit.

(d) For T>Tcyou can evaluate the integral using the values of μcalculated in Problem 7.69. Do this to obtain the energy as a function of temperature, then numerically differentiate the result to obtain the heat capacity. Plot the heat capacity, and check that your graph agrees with Figure 7.37.

Figure 7.37. Heat capacity of an ideal Bose gas in a three-dimensional box.

Problem 7.69. If you have a computer system that can do numerical integrals, it's not particularly difficult to evaluate μforT>Tc.

(a) As usual when solving a problem on a computer, it's best to start by putting everything in terms of dimensionless variables. So define t=T/Tc,c=μ/kTc,andx=ϵ/kTc. Express the integral that defines , equation 7.22, in terms of these variables. You should obtain the equation

2.315=0xdxe(x-c)/t-1

(b) According to Figure

the correct value of cwhen T=2Tcis approximately -0.8. Plug in these values and check that the equation above is approximately satisfied.

(c) Now vary μ, holding Tfixed, to find the precise value of μfor T=2Tc. Repeat for values of T/Tcranging from 1.2up to 3.0, in increments of 0.2. Plot a graph of μas a function of temperature.

The previous two problems dealt with pure semiconductors, also called intrinsic semiconductors. Useful semiconductor devices are instead made from doped semiconductors, which contain substantial numbers of impurity atoms. One example of a doped semiconductor was treated in Problem 7.5. Let us now consider that system again. (Note that in Problem 7.5 we measured all energies relative to the bottom of the conduction band, Ee. We also neglected the distinction between g0and g0c; this simplification happens to be ok for conduction electrons in silicon.)

(a) Calculate and plot the chemical potential as afunction of temperature, for silicon doped with 1017phosphorus atoms per cm3(as in Problem 7.5). Continue to assume that the conduction electrons can be treated as an ordinary ideal gas.

(b) Discuss whether it is legitimate to assume for this system that the conduction electrons can be treated asan ordinary ideal gas, as opposed to a Fermi gas. Give some numerical examples.

(c)Estimate the temperature at which the number of valence electrons excitedto the conduction band would become comparable to the number ofconduction electrons from donor impurities. Which source of conductionelectrons is more important at room temperature?

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