In Problem 7.28you found the density of states and the chemical potential for a two-dimensional Fermi gas. Calculate the heat capacity of this gas in the limit role="math" localid="1650099524353" kTεF· Also show that the heat capacity has the expected behavior when kTεF. Sketch the heat capacity as a function of temperature.

Short Answer

Expert verified

The heat capacity of the gas in the limit is CV=N(kπ)2T3εF.

The graph of heat capacity as a function of temperature is

Step by step solution

01

Given information

We have been given that the density of states and the chemical potential for a two-dimensional Fermi gas which we have found earlier in Problem 7.28isg(ε)=NεF.

We need to find the heat capacity of this gas in the limit kTεFand show that the heat capacity has the expected behavior when kTεF. Also we need to sketch the heat capacity as a function of temperature.

02

Simplify

The total energy is given by the following integral:

U=0εg(ε)n¯FD(ε)dε (Let this equation be (localid="1650103209259" 1))

We have found the energy density earlier in Problem 7.28such as

localid="1650102270353" g(ε)=NεF

Substitute the value of g(ε)in equation (localid="1650103517684" 1), we get:

U=NεF0εn¯FD(ε)dε

Integrating by parts, we get:

U=NεFε22n¯FD|0-NεF0ε22n¯FDεdε (Let this equation be (2))

If we substitute ε=0, the integral will become zero due to the dependence of the term on ε2and the first term vanishes.

The equation (2) reduces to :

U=-NεF0ε22n¯FDεdε (Let this equation be (3))

We know that n¯FD=1e(e-μ)kT+1

Taking derivative with respect to ε, we get:

localid="1650103912932" n¯FDε=1e(ε-μ)kT+1ε

n¯FDε=-1kTe(ε-μ)kT(e(ε-μ)kT+1)2

Let (ε-μ)kT=x, then we can write as:

dx=dεkT

We also need to change the boundaries of integration, so:

ε x

ε0 x-μkT

As kTμ, we can put -as the lower limit of integration.

The integral in equation (3) will become:

U=N2εF-ε2ex(ex+1)2dx (Let this equation be (localid="1650114310341" 4))

03

finding the values of integrals

Now expanding ε2about μusing Taylor series, we get:

ε2=μ2+2μ(ε-μ)x+(ε-μ)x2ε2=μ2+2μ(kTx)+(kTx)2

By substituting the value of in equation (4), we get three integrals say I1,I2,I3

The equation (4) will become:

U=N2εF[I1+I2+I3] (Let this equation be (5))

where,

I1=μ2-ex(ex+1)2dxI2=2kTμ-xex(ex+1)2dxI3=(kT)2-x2ex(ex+1)2dx

Simplifying the integrals I1,I2,I3, we get:

I1=μ2

The second integral is odd integral and the limits of integration are from to , so this integral is simply zero.

I2=0

I3=(kT)2π23=(kTπ)23

Substitute the values of in equation (5), we get:

U=N2εFμ2+(kTπ)23

Let μ=εF, we get:

U=N2εFεF2+(kTπ)23U=NεF2+N(kTπ)26εF

The heat capacity is the partial derivative of with respect to the temperature, that is:

CV=UTCV=NεF2+N(kTπ)26εFTCV=N(kπ)2T3εF

04

Graph

The graph of the heat capacity as a function of temperature is linear, where the slope of the line is Slope=N(kπ)23εF.

Unlock Step-by-Step Solutions & Ace Your Exams!

  • Full Textbook Solutions

    Get detailed explanations and key concepts

  • Unlimited Al creation

    Al flashcards, explanations, exams and more...

  • Ads-free access

    To over 500 millions flashcards

  • Money-back guarantee

    We refund you if you fail your exam.

Over 30 million students worldwide already upgrade their learning with Vaia!

One App. One Place for Learning.

All the tools & learning materials you need for study success - in one app.

Get started for free

Most popular questions from this chapter

Consider an isolated system of Nidentical fermions, inside a container where the allowed energy levels are nondegenerate and evenly spaced.* For instance, the fermions could be trapped in a one-dimensional harmonic oscillator potential. For simplicity, neglect the fact that fermions can have multiple spin orientations (or assume that they are all forced to have the same spin orientation). Then each energy level is either occupied or unoccupied, and any allowed system state can be represented by a column of dots, with a filled dot representing an occupied level and a hollow dot representing an unoccupied level. The lowest-energy system state has all levels below a certain point occupied, and all levels above that point unoccupied. Let ηbe the spacing between energy levels, and let be the number of energy units (each of size 11) in excess of the ground-state energy. Assume thatq<N. Figure 7 .8 shows all system states up to q=3.

(a) Draw dot diagrams, as in the figure, for all allowed system states with q=4,q=5,andq=6. (b) According to the fundamental assumption, all allowed system states with a given value of q are equally probable. Compute the probability of each energy level being occupied, for q=6. Draw a graph of this probability as a function of the energy of the level. ( c) In the thermodynamic limit where qis large, the probability of a level being occupied should be given by the Fermi-Dirac distribution. Even though 6 is not a large number, estimate the values of μand T that you would have to plug into the Fermi-Dirac distribution to best fit the graph you drew in part (b).

A representation of the system states of a fermionic sytern with evenly spaced, nondegen erate energy levels. A filled dot rep- resents an occupied single-particle state, while a hollow dot represents an unoccupied single-particle state . {d) Calculate the entropy of this system for each value of q from 0to6, and draw a graph of entropy vs. energy. Make a rough estimate of the slope of this graph near q=6, to obtain another estimate of the temperature of this system at that point. Check that it is in rough agreement with your answer to part ( c).

Consider any two internal states, s1 and s2, of an atom. Let s2 be the higher-energy state, so that Es2-Es1=ϵ for some positive constant. If the atom is currently in state s2, then there is a certain probability per unit time for it to spontaneously decay down to state s1, emitting a photon with energy e. This probability per unit time is called the Einstein A coefficient:

A = probability of spontaneous decay per unit time.

On the other hand, if the atom is currently in state s1 and we shine light on it with frequency f=ϵ/h, then there is a chance that it will absorb photon, jumping into state s2. The probability for this to occur is proportional not only to the amount of time elapsed but also to the intensity of the light, or more precisely, the energy density of the light per unit frequency, u(f). (This is the function which, when integrated over any frequency interval, gives the energy per unit volume within that frequency interval. For our atomic transition, all that matters is the value of u(f)atf=ϵ/h) The probability of absorbing a photon, per unit time per unit intensity, is called the Einstein B coefficient:

B=probability of absorption per unit timeu(f)

Finally, it is also possible for the atom to make a stimulated transition from s2down to s1, again with a probability that is proportional to the intensity of light at frequency f. (Stimulated emission is the fundamental mechanism of the laser: Light Amplification by Stimulated Emission of Radiation.) Thus we define a third coefficient, B, that is analogous to B:

B'=probability of stimulated emission per unit timeu(f)

As Einstein showed in 1917, knowing any one of these three coefficients is as good as knowing them all.

(a) Imagine a collection of many of these atoms, such that N1 of them are in state s1 and N2 are in state s2. Write down a formula for dN1/dt in terms of A, B, B', N1, N2, and u(f).

(b) Einstein's trick is to imagine that these atoms are bathed in thermal radiation, so that u(f) is the Planck spectral function. At equilibrium, N1and N2 should be constant in time, with their ratio given by a simple Boltzmann factor. Show, then, that the coefficients must be related by

B'=BandAB=8πhf3c3

When the attractive forces of the ions in a crystal are taken into account, the allowed electron energies are no longer given by the simple formula 7.36; instead, the allowed energies are grouped into bands, separated by gaps where there are no allowed energies. In a conductor the Fermi energy lies within one of the bands; in this section we have treated the electrons in this band as "free" particles confined to a fixed volume. In an insulator, on the other hand, the Fermi energy lies within a gap, so that at T = 0 the band below the gap is completely occupied while the band above the gap is unoccupied. Because there are no empty states close in energy to those that are occupied, the electrons are "stuck in place" and the material does not conduct electricity. A semiconductor is an insulator in which the gap is narrow enough for a few electrons to jump across it at room temperature. Figure 7 .17 shows the density of states in the vicinity of the Fermi energy for an idealized semiconductor, and defines some terminology and notation to be used in this problem.

(a) As a first approximation, let us model the density of states near the bottom of the conduction band using the same function as for a free Fermi gas, with an appropriate zero-point: g(ϵ)=g0ϵ-ϵc, where go is the same constant as in equation 7.51. Let us also model the density of states near the top

Figure 7.17. The periodic potential of a crystal lattice results in a densityof-states function consisting of "bands" (with many states) and "gaps" (with no states). For an insulator or a semiconductor, the Fermi energy lies in the middle of a gap so that at T = 0, the "valence band" is completely full while the-"conduction band" is completely empty. of the valence band as a mirror image of this function. Explain why, in this approximation, the chemical potential must always lie precisely in the middle of the gap, regardless of temperature.

(b) Normally the width of the gap is much greater than kT. Working in this limit, derive an expression for the number of conduction electrons per unit volume, in terms of the temperature and the width of the gap.

(c) For silicon near room temperature, the gap between the valence and conduction bands is approximately 1.11 eV. Roughly how many conduction electrons are there in a cubic centimeter of silicon at room temperature? How does this compare to the number of conduction electrons in a similar amount of copper?

( d) Explain why a semiconductor conducts electricity much better at higher temperatures. Back up your explanation with some numbers. (Ordinary conductors like copper, on the other hand, conduct better at low temperatures.) (e) Very roughly, how wide would the gap between the valence and conduction bands have to be in order to consider a material an insulator rather than a semiconductor?

The planet Venus is different from the earth in several respects. First, it is only 70% as far from the sun. Second, its thick clouds reflect 77%of all incident sunlight. Finally, its atmosphere is much more opaque to infrared light.

(a) Calculate the solar constant at the location of Venus, and estimate what the average surface temperature of Venus would be if it had no atmosphere and did not reflect any sunlight.

(b) Estimate the surface temperature again, taking the reflectivity of the clouds into account.

(c) The opaqueness of Venus's atmosphere at infrared wavelengths is roughly 70times that of earth's atmosphere. You can therefore model the atmosphere of Venus as 70successive "blankets" of the type considered in the text, with each blanket at a different equilibrium temperature. Use this model to estimate the surface temperature of Venus. (Hint: The temperature of the top layer is what you found in part (b). The next layer down is warmer by a factor of 21/4. The next layer down is warmer by a smaller factor. Keep working your way down until you see the pattern.)

Evaluate the integral in equation N=2π2πmh23/2V0ϵdϵeϵ/kT-1numerically, to confirm the value quoted in the text.

See all solutions

Recommended explanations on Physics Textbooks

View all explanations

What do you think about this solution?

We value your feedback to improve our textbook solutions.

Study anywhere. Anytime. Across all devices.

Sign-up for free
OSZAR »