Although the integrals (7.53and 7.54) forNand Ucannot be

carried out analytically for all T, it's not difficult to evaluate them numerically

using a computer. This calculation has little relevance for electrons in metals (for

which the limit kT<<EFis always sufficient), but it is needed for liquid H3eand

for astrophysical systems like the electrons at the center of the sun.

(a) As a warm-up exercise, evaluate theNintegral (7.53) for the casekT=εF

and μ=0, and check that your answer is consistent with the graph shown

above. (Hint: As always when solving a problem on a computer, it's best to

first put everything in terms of dimensionless variables. So let t=kTεFrole="math" localid="1649996205331" ,c=μεF

, and x=εkT. Rewrite everything in terms of these variables,

and then put it on the computer.)

(b) The next step is to varyμ holdingT fixed, until the integral works out to

the desired value,N. Do this for values of kTεFranging from 0.1 up to 2,

and plot the results to reproduce Figure7.16. (It's probably not a good idea

to try to use numerical methods when kTεF is much smaller than 0.1, since

you can start getting overflow errors from exponentiating large numbers.

But this is the region where we've already solved the problem analytically.)

(c) Plug your calculated values ofµ into the energy integral (7.54), and evaluate

that integral numerically to obtain the energy as a function of temperature

forkTup to 2εF Plot the results, and evaluate the slope to obtain the

heat capacity. Check that the heat capacity has the expected behavior at

both low and high temperatures.

Short Answer

Expert verified

a) The value of Nintegral is 1.0171.

b) The value of c=-0.0215

c) We get the final equation asUNεF=320x3/2ex-ct+1dx

Step by step solution

01

Part(a) Step 1: Given information 

We have to find that evaluation theNintegral (7.53) for the casekTε0and μ=0, and checking the answer is consistent with the graph shown above.

02

Part(a) Step 2: Simplify 

To find no. of particles,

N=0gε1eε-μkT+1dεgε=3N2εF3/2ε

putting these things, N=03N2εF3/2ε1eε-μkT+1dε1=032εF3/2ε1eε-μkT+1dε

We assume , t=kTεF,c=μεF,x=εεFdx=dεεF

We get , 1=320xex-c/t+1dx1=320xex/t+1dx

using Matlab , RHS integral can be calculated , it comes out to be 1.017, so μis not equals to 0 when εF=kT.

03

Part(b) Step 1: Given information 

We need to varyμholding Tfixed, to get the desired value,N, for values of kT/εFranging from 0.1up to 2,and plotting the results to reproduce Figure 7.15

04

Part(b) Step 2: Simplify 

Here, for specific value of cand , we well find integral , also temperature will be fixed, so we assume the value oft=1. We will find the value of c,so that we get correct result of integral which is 1,to find this we will use Matlab. With respect to the two variables,x andc, equation 1 will be defined, we will integrate with respect to xfrom 0and , so here function will be in variable only, we will calculate the value of c , the interval will be from -1to 0.1 ,

So, c=-0.0215.

Then , We will find constant with different temperatures value, here t will be changed and same instructions will be done . The interval of solutions, will also be changed from -1to 2. We will changetfrom 0.1to 2.0. The following graph will be obtained.

05

Part(c) Step 1: Given information 

We are asked to check that the heat capacity has the expected behavior at both low and high temperatures.

06

Part(c) Step 2: Simplify 

By plotting data in Excel, we will add trend line to actually see the equation which fits into data ,

Here, the equation between tand cfrom graph can be seen ,

c=-08469t2-0.2019x+1.0412U=0εgε1eε-μkT+1dε

We can find the value of energy density here as;

gε=3N2εF3/2εt=kTεF,c=μεF,x=εεFdx=dεεF

Finally , UNεF=320x3/2ex-ct+1dx


We can find heat capacity by doing partial derivative of total energy with respect to to temperature.


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Most popular questions from this chapter

For a system of particles at room temperature, how large must ϵ-μbe before the Fermi-Dirac, Bose-Einstein, and Boltzmann distributions agree within 1%? Is this condition ever violated for the gases in our atmosphere? Explain.

Imagine that there exists a third type of particle, which can share a single-particle state with one other particle of the same type but no more. Thus the number of these particles in any state can be 0,1 or 2 . Derive the distribution function for the average occupancy of a state by particles of this type, and plot the occupancy as a function of the state's energy, for several different temperatures.

Consider a system of five particles, inside a container where the allowed energy levels are nondegenerate and evenly spaced. For instance, the particles could be trapped in a one-dimensional harmonic oscillator potential. In this problem you will consider the allowed states for this system, depending on whether the particles are identical fermions, identical bosons, or distinguishable particles.

(a) Describe the ground state of this system, for each of these three cases.

(b) Suppose that the system has one unit of energy (above the ground state). Describe the allowed states of the system, for each of the three cases. How many possible system states are there in each case?

(c) Repeat part (b) for two units of energy and for three units of energy.

(d) Suppose that the temperature of this system is low, so that the total energy is low (though not necessarily zero). In what way will the behavior of the bosonic system differ from that of the system of distinguishable particles? Discuss.

In Section 6.5 I derived the useful relation F=-kTln(Z)between the Helmholtz free energy and the ordinary partition function. Use analogous argument to prove that ϕ=-kT×ln(Z^), where Z^ is the grand partition function and ϕis the grand free energy introduced in Problem 5.23.

Consider a system consisting of a single impurity atom/ion in a semiconductor. Suppose that the impurity atom has one "extra" electron compared to the neighboring atoms, as would a phosphorus atom occupying a lattice site in a silicon crystal. The extra electron is then easily removed, leaving behind a positively charged ion. The ionized electron is called a conduction electron because it is free to move through the material; the impurity atom is called a donor, because it can "donate" a conduction electron. This system is analogous to the hydrogen atom considered in the previous two problems except that the ionization energy is much less, mainly due to the screening of the ionic charge by the dielectric behavior of the medium.

(a) Write down a formula for the probability of a single donor atom being ionized. Do not neglect the fact that the electron, if present, can have two independent spin states. Express your formula in terms of the temperature, the ionization energy I, and the chemical potential of the "gas" of ionized electrons.

(b) Assuming that the conduction electrons behave like an ordinary ideal gas (with two spin states per particle), write their chemical potential in terms of the number of conduction electrons per unit volume,NcV.

(c) Now assume that every conduction electron comes from an ionized donor atom. In this case the number of conduction electrons is equal to the number of donors that are ionized. Use this condition to derive a quadratic equation for Ncin terms of the number of donor atoms Nd, eliminatingµ. Solve for Ncusing the quadratic formula. (Hint: It's helpful to introduce some abbreviations for dimensionless quantities. Tryx=NcNd,t=kTland so on.)

(d) For phosphorus in silicon, the ionization energy is localid="1650039340485" 0.044eV. Suppose that there are 1017patoms per cubic centimeter. Using these numbers, calculate and plot the fraction of ionized donors as a function of temperature. Discuss the results.

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